| 摘要 |
PURPOSE:To maintain the potential of a P-type well at 0 volt by a method wherein a trench which is to be an element isolation region is formed in the surface of a substrate and metal is buried in the trench so as to be contacted with the substrate. CONSTITUTION:As an element is isolated by a trench 17 grooved in a silicon substrate, the element isolation region can be narrowed so that picture elements can be highly integrated. Moreover, a slant incident light A is shielded by Mo metal 18 buried in the trench 17 and does not penetrate into a P-type region under a charge transfer part so that a dummy signal is not created and smear can be suppressed. Further, by maintaining the potential of the Mo metal 18 at 0 volt outside an image pickup plane, as the Mo metal 18 has low resistance, the potential of the P-type well inside the image pickup plane can be maintained at 0 volt over the whole region. With this constitution, the potential of the P-type well can be maintained at 0 volt steadily. |
