| 摘要 |
PURPOSE:To improve anticorrosion property and a throughput by providing a step, where in a space between electrodes oppositely provided internally in a treating chamber for an anode coupling type etching device is specified, and a step, where in a pressure in the treating chamber is brought to a specific pressure, and a step where in a sample is heated. CONSTITUTION:When a space between electrodes oppositely provided internally in a treating chamber for an anode coupling type etching device is brought to 10-4Omm and pressure in the treating chamber to 40-200Pa, a resist removal rate of 1000nm or more is acquired. When a sample is heated at 100 deg.C or more at the same time, chlorine group compounds remaining in the sample after dry etching are scattered including aluminum trichloride having the lowest vapor pressure in the compounds. When an aluminum alloy film is formed to the sample, which is heated normally at a temperature of 200 deg.C or less. Accordingly, anticorrosion after the aluminum alloy film is dry-etched by using a chlorine group gas and the improvement of a throughput is attained simultaneously.
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