| 摘要 |
PURPOSE:To realize the increase in integration providing resistor which is the combination of a diffusion resistor composed of a different conductivity type layer formed in a semiconductor substrate and a film resistor composed of a polycrystalline silicon layer formed on the substrate with an insulating film. CONSTITUTION:A diffused layer 2 whose conductivity type is different from that of a silicon substrate 1 is formed in the substrate 1 and, after the surface of the substrate is covered with an oxide film 3, a polycrystalline silicon layer containing impurity is deposited and, successively, the surface is covered with an insulating film 5 and then terminal electrodes 61 and 62 and a contact electrode 63 which are contacted with the diffusion resistor layer 2 or the polycrystalline silicon resistance layer 4 are formed in apertures provided in the insulating film 5. In this three-dimensional structure, wherein the polycrystalline silicon resistor layer 4 is formed on the oxide film 3 immediately above the diffusion resistor layer 2 and the two resistor layers are connected by the electrode 63, as the film resistor made of polycrystalline silicon which has a negative temperature coefficient and the diffusion resistor which has a positive temperature coefficient are connected in series, the temperature compensation can be achieved. With this constitution, the area occupied by the resistance can be reduced owing to the three-dimensional structure so that the increase in integration can be realized.
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