| 摘要 |
PURPOSE:To form a thin film of high electric resistance material and realize the microminiaturization of thin film resistance electronic parts by a method wherein a thin metal film formed on an insulating substrate is exposed to an active atmosphere of nitrogen, oxygen or the like and subjected to the irradia tion of a high energy beam such as a laser beam or an electron beam. CONSTITUTION:A tantalum thin film 2 is formed on an alumina substrate 8 by sputtering and an aluminum thin film is formed on the thin film 2 by sputtering. Then both the aluminum film and the tantalum film are etched by photoetching to form a circuit pattern. In a heating resistance port, the aluminum film only is removed by photoetching to form a dotted pattern to expose the tantalum film in dots. The substrate is placed in an apparatus and an NC table 3 is moved in accordance with the program and a laser beam 6 is applied to the dot-shape exposed parts of the tantalum film 2. With this constitution, the tantalum film is heated by the laser beam and chemically reacts with nitrogen, which is an atmospheric gas to form tantalum nitride, so that a thin film which has a resistance value large enough to be a thin film resistance element can be obtained.
|
