| 摘要 |
PURPOSE: To improve damp-proofing by covering the constituent of a semiconductor device formed to the surface of the semiconductor device with a cover consisting of an inorganic material different from the semiconductor device. CONSTITUTION:An N-type layer 2 for shaping a terminal is formed to a P-type substrate 1 consisting of silicon, a P-type layer 3 is superposed on the whole surface of the silicon substrate, and N-type impurity diffusion in proper size is conducted to a terminal leading-out port 4 section for performing the transmis sion and reception of an electric signal with the surface of the P-type layer 3. A circuit pattern 5 for a semiconductor device is shaped onto the surface of the P-type layer 3, and the whole of the circuit pattern 5 for the semiconduc tor device is covered with a cover 6 composed of alumina ceramics. The cover 6 and the surface of the P-type layer 3 on the outside of the cover 6 are shaven simultaneously by the mxied liquid of hydrofluoric acid and nitric acid and a fluorine group gas, and the N-type layer 2 for shaping the terminal is exposed. The whole is coated with a protective film 12, holes 14 for bonding pads 13 are formed at predetermined positions, and gold wires 15 are connected onto the bonding pads 13 in a reducing atmosphere. Accordingly, the corrosion of a metal by moisture is removed completely. |
