| 摘要 |
PURPOSE:To manufacture the title device with excellent moisture resistance by a method wherein a three layered passivation structure is composed of a high temperature cured polyimide, a low temperature cured polyimide and an inorganic material. CONSTITUTION:A photodetector comprising an amorphous silicon 2 and a thin film transistor formed of a gate oxide film 3 driving the photodetector, a polycrystalline silicon gate electrode 4, interlayer insulating films 5, an aluminium electrode 6, an a-Si:H 7 and a transparent electrode 8 are formed on an insulating substrate 1 to constitute a solid image pick-up device. Furthermore, a polyimide resin coating layer 9 to be cured at the temperature not exceeding 300 deg.C and another polyimide resin coating layer 10 to be imidized at the temperature exceeding 300 deg.C are formed on the topmost part and after curing these two kinds of polyimide resin coating layers at the temperature exceeding 150 deg.C and not exceeding 300 deg.C, the other coating layer 11 comprising an inorganic material is formed at the temperature not exceeding 300 deg.C to provide a three layered passivation layer. |
