| 摘要 |
PURPOSE:To cause a warped semiconductor substrate to recover its original state and to reduce possibilities of breaking the substrate during the following washing or drying process when the substrate is ground down to reduce its thichness up to 60% or less of the original thickness, by etching the substrate after grinding the same. CONSTITUTION:After elements are provided on the top face of a semiconductor substrate l, the top face of the substrate l is covered vith resist 2. The substrate I is then ground from the bottom face thereof so as to reduce its thickness up to 60% or less of the original thickness of the substrate. the superficial layer on the bottom face of the substrate l is removed by etching. Subsequently, the resist 2 on the top face is removed. In this manner, the warped substrate I is allowed to recover its original state, and possibilities of breaking the substrate when it is washed or dried during the following process can be reduccd substantially.
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