| 摘要 |
PURPOSE:To produce a superlattice structure with laminated thin films each having a thicKness of about 5Angstrom , by heating the growing surface of a substrate up to a temperature higher than the growing temperature in synchronization with interruption of supply of a material gas for changing the type of material gas to be supplied among several types of material gases. CONSTITUTION:A material gas A is supplied to a reaction furnace 7 so that the material A is grown on a growing substrate 9. A second heating furnace 12 is turned ON at the moment the growth of the material A has been completed, entering into the purging state, so that the growing surface is heated to 400 deg.C, higher than the growing temperature(320 deg.C) and held at that temperature for a predetermined period of time. After the predetermined period of time elapsed, the second heating furnace 12 is turned OFF. After a while. a material gas B is supplied and similar procedures are performed as in the case of the material gas A so that a laminated structure consisting, for example, of a 10Angstrom thick ZnSe layer and a 50Angstrom thick ZnS layer is produced. |
