| 摘要 |
PURPOSE:To make it possible to carry out mass production of semiconductor light emitting devices featuring less dispersion in characteristics, by using an MOCVD method utilizing dialkylzinc, dialkylsulfer, dialkylselenium and dialkyltellurium in forming thin films. CONSTITUTION:Source lines 26 and 28 are introduced to a waste gas line 24, and raw materials of zinc, selenium and tellurium are supplied. Triethylaluminum is supplied to the source line 26. On an N-type GaAs substrate, N-type ZnSe layers having a thickness of 30 Angstrom and nondoped ZuTe layers having a thickness of 5 Angstrom are alternately laminated by 100 times. The supply of triethylaluminum is stopped, and the supply of hydrogen arsenide is started. Nondoped ZuSe layers having a thickness of 30 Angstrom and P-type ZnTe layers having a thickness of 5 Angstrom are alternately laminated by 100 times. By forming ohmic contact on the substrate and the grown layer a semiconductor light emitting device can be manufactured. |
