HIGH SPEED SWITCH-OFF CIRCUIT OF CONDUCTIVITY MODULATED FIELD EFFECT TRANSISTOR

摘要

A fast switch-off circuit for a conductivity modulated field effect transistor (COMFET) avoids the flow of destructive latch-up currents. A reduced-amplitude switch-off current is applied to the gate electrode of the COMFET during the initial portion of switch-off. When the source-to-drain voltage (VDS) of the COMFET has become larger than the range of low VDS voltage in which latch-up can occur for an increased-amplitude switch-off current being applied to the gate electrode of the COMFET, that increased-amplitude switch-off current is applied to the gate electrode of the COMFET.