| 摘要 |
PURPOSE:To decrease a driving voltage for a device and to improve withstanding voltage, by utilizing a specified heat resisting polyimide thin film, and preparing an electric/electronic device. CONSTITUTION:An amphoteric polyimide precursor, whose number average molecular weight having a repeating unit expressed by Formula I is 2,000-3,000, is laminated on a substrate, which has been machined beforehand as required, by a Langmuir-Blodgett method. Then, imide forming reaction is performed desirably thermally, and a heat resisting polyimide thin film is formed. Thereafter, an electric/electronic device is formed by performing succeeding mahining as required. In the Formula, R<1> is a quadrivalent group including at least 2 carbon atoms; R<2> is a bivalent group including at least 2 carbon atoms; and R<3>-R<6> are a monovalent aliphatic group having 1-30 carbon atoms, a monovalent cyclic aliphatic group and the like. |
