| 摘要 |
PURPOSE:To form a P-type semiconductor whose density is higher than that of a semiconductor obtained by a method in which ion implantation of acceptor impurity and V elements are carried out in spite of the fact that total content of ion being implanted is almost equal to that of a conventional method, by a method wherein ion implantation of C and Si are performed almost at the same time as the process in which ion implantation of Be and Mg is performed into a III-V compound semiconductor layer, and the P-type layer of high density is formed by a heat treatment after the process of ion implantation. CONSTITUTION:Three processes are arranged as follows; a first process wherein ion implantation of group II element is performed into a III-V compound semiconductor layer, a second process wherein ion implantation of carbon or silicon, being a IV element, is performed into the same region of the semiconductor layer almost at the same time of the first process, and a third process wherein a P-type layer of high density is formed by a thermal treatment after the ion implantation processes. GaAs as the III-V compound and magnesium or Beryllium as a II element are used. The P-type layer of high density is the external base layer of a hetero junction bipolar transistor.
|
