| 摘要 |
<p>PURPOSE:To correct short circuit defects due to troubles generated in assembling processes in addition to short circuit defects caused when a thin film transistor (TFT) array is formed, by detecting the short circuit defects by the final inspecting process after the manufacture of a liquid crystal display device, and cutting and isolating the defects by projecting a laser beam. CONSTITUTION:A figure (a) shows a cross section, in which a laser beam 17 is projected on a short circuit part 18 when the short circuit part 18 is yielded between a source and a drain. Figure (b) shows the fact that the short circuit part 18 between the source and the drain is cut and isolated by the projection of the laser beam 17. Namely, a TFT array is formed on a substrate 5. At a position facing the substrate 5, a counter substrate 15, on which a transparent conducting film 14 is formed, is provided. The TFT array of the liquid crystal display device holding a liquid crystal material 16 is formed between both substrates 5 and 15. The laser beam 17 is projected on the short circuit part 18 between the source and the drain, and the short circuit part 18 between the source and the drain is cut and isolated. Thus the short circuit defect is corrected.</p> |
