| 摘要 |
PURPOSE:To enhance an open circuit voltage and to obtain high conversion efficiency, by inserting a specified silicon nitride film at an interface between an (i) layer and an (n) layer of a p-i-n junction. CONSTITUTION:In a solar cell comprising a substrate 1, a (p) layer 3, an (i) layer 4, an (n) layer 6 and electrodes 2 and 7; a silicon nitride film 5 expressed by Si3-xHx is inserted between the (i) layer 4 and the (n) layer 6. Since the silicon, nitride film 5 is inserted between the (i) layer 4 and the (n) layer 6 at a p-i-n junction in this structure, the movement of majority carriers is blocked at the i-n interface. The silicon nitride film 5 spreads to the side of a conduction band and to the side of a valence band in comparison with a-Si:H. Therefore the film 5 functions so as to block the flow of diffused hole toward the (n) layer and the injection of majority carriers from the (n) layer 6 effectively. As a result, a high open circuit voltage is provided. |
