| 摘要 |
PURPOSE:To improve sensitivity and to implement a thin film, by keeping the temperature of a substrate for evaporation at a high temperature at first, gradually increasing the temperature of an evaporation source, decreasing the temperature of the substrate for evaporation when attachment of groups III-V intermetallic compound to the substrate for evaporation is started, further controlling the evaporating time, thereby carrying out manufacturing. CONSTITUTION:Atmospheric pressure in a bell jar 4 is kept at 10<-4>. 10<-6> torr. The temperature of a mica substrate is kept at 430-460 deg.C. At the same time the temperature of a boat 8 is increased. In this boat, In-Sb single crystal having a purity of 5N (99.999%) is fused. Then a current applied to the boat 8 is gradually increased' and the evaporation of In-Sb is positively increased. At this time' Sb is not attached to the surface of a substrate 10, but In is thinly attached to the entire surface at first. Then' Sb is absorbed into the attached In' and an initial nucleus is formed. Thereafter,the surface temperature of the mica substrate 10 is decreased to 410-425 deg.C, which is kept for a specified time period. Then In and Sb obtain desired stoichiometric composition, and a thin film having a thickness of 1.5-0.6mum is formed.
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