| 摘要 |
PURPOSE:To facilitate the manufacturing processes of a minute-size heterojunction bipolar transistor remarkably, by forming a collector electrode on the entire surface of the upper side of a collector, and exposing a semiconductor material layer forming a base, with the collector electrode as a mask. CONSTITUTION:A collector electrode 7 is formed by liftoff on an epitaxially formed multilayer structure material, which is used for forming a heterojunction bipolar transistor; or a metal, which is to become an electrode, is formed on the entire surface. Thereafter the electrode 7 is formed by photolithography and ethcing. Then, with said collector electrode 7 as a mask, etching is performed, and a semiconductor material layer 4 forming a base is exposed. Thus a collector mesa is formed. Thereafter, processes for forming a base mesa' a base electrode and an emitter electrode, which are ordinarily used for manufacturing the heterojunction bipolar transistor, are used.
|
