| 摘要 |
PURPOSE:To form a high quality thin film having a low density of impurity like oxygen and nitrogen, and improve throughput, by providing a means to attach and detach a substrate and an introducing window without exposing the interior of a film forming chamber to an atmosphere. CONSTITUTION:The interior of a film forming chamber 1 and that of an accommodation chamber 14 are exhauoted. A light introducing window 16 is introduced into a preparatory chamber 19, whose inner part is exhausted. A gate valve 20 is opened to introduce the light introducing window 16 into the accommodation chamber 14. The light introducing window 16 is attached, and the gate valve 20 is closed. A substrate holder 3 on which a substrate 2 is mounted is introduced into a preparatory chamber 9, the interior of which is exhausted. By opening a gate valve 10, the substrate holder 3 is introduced into the film forming chamber 1, and mounted on a sample stand 4. Then the gate valve is closed, film forming is pergormed. After that, gas supplying is stopped, the preparatory chamber 9 is exhausted, the gate valve 10 is opened, the substrate holder 3 is conveyed into the preparatory chamber 9, the gate valve 10 is closed, the interior of the preparatory chamber 9 is leaked, and the substrate 2 is taken out. Next, the interior of the preparatory chamber 19 is exhausted, the gate valve 20 is opened, the light introducing window 16 is conveyed into the preparatory chamber 19, the gate valve 20 is closed, the interior of the preparatory chamber 19 is leaked, and the light introducing window 16 is taken out.
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