| 摘要 |
PURPOSE:To improve the accuracy of a resist pattern by forming the 1st layer to fill recesses of a high sensitivity resist and the 2nd layer thereon of an ordinary sensitivity resist at the time of forming the resist on a substrate having the recesses on the surface. CONSTITUTION:The recesses 1a of the substrate 1 are filled with the ordinary sensitivity resist layer 5 and the regions except said recesses are coated 5 to a small thickness. The ordinary sensitivity resist layer 6 is coated on the layer 5. The resist layers are then exposed to form the photosensitive regions 5a, 5b on the 1st and 2nd resist layers 5, 6 corresponding to the irradiated regions 3. The resist layers are developed to remove the regions 5a, 6a and are baked to form the resist pattern 7. The 1st resist layer 5 is made higher in sensitivity than the 2nd resist layer 6 and therefore, the 1st resist layer 5 can be substantially sensitized simply by making the irradiation intensity of the exposing light slightly higher than the intensity suitable for the 2nd resist layer 6. Since the irradiation intensity of the exposing light is decreased in the above-mentioned manner, the pattern is formed with high accuracy. |
