发明名称 VACUUM TREATMENT APPARATUS
摘要 PURPOSE:To perform the treatment of the surface of a large material to be treated efficiently and uniformly in the longitudinal direction, by providing one or more plasma yielding chambers, and forming the shape of the cross section of an the opening part of the yielding chamber, which has the opening on the side of a sample chamber, so that one side of the cross section is longer than the other side. CONSTITUTION:The shape of the cross section of an opening part 21 of a plasma yielding chamber 1 is mode rectangular. A substrate 14 is mounted on a sample stage 13 on a conveying system 12. Two side chambers are provided with respect to a sample chamber 9 through valves. The substrate is stored in one side chamber, and air is exhausted. When the air exhaustion is finished, the valve is opened and the substrate 14 is conveyed into the sample cahmber 9. Then the valve is closed. When the specified treatment is finished in the sample cahmber 9, the other valve is opened, and the substrate is seut to the other side chamber. Then the valve is closed. The vacuum state in the side chamber is returned to the normal pressure, and the substrate 14 is taken out of the side chamber. Many resonance cavities are arranged in the conveying direction of the substrate. Thus, etching, thin film formation and quality improvement can be continuously performed without loosing the vacuum state.
申请公布号 JPS62229841(A) 申请公布日期 1987.10.08
申请号 JP19860072025 申请日期 1986.03.28
申请人 ANELVA CORP 发明人 ASAMAKI TATSUO;INO YOICHI;SASAKI MASAMI
分类号 H01L21/205;C23F1/00;C23F4/00;H01L21/302;H01L21/3065;H01L21/31 主分类号 H01L21/205
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