| 摘要 |
PURPOSE:To reduce the parasitic resistance and capacity by a method wherein a cahthode electrode is provided on a semiconductor substrate and then an anode electrode is provided around the cathode electrode. CONSTITUTION:An N well 12 to make a Schottky barrier is formed on a GaAs substrate end then a WN film 13 is deposited on overall surface. Next, the WN film 13 is circularly processed to form a WN film pattern l3a as an anode and then an N<+> diffused layer 14 is formed on a substrate in self alignment using the processed WN metal part 15 as a cathode is formed on the N<+> diffused layer 14 to form the first interconnection layer 16 as the first layer on the metal part 15 as well as the second circular interconnection162 as the first layer on the WN film 13. Successively an interlayer insulating film is formed on overall surface and then a contact hole 18 is made. Finally, the third interconnection 19 as the second layer connecting to the first interconnection 161 is formed on the contact hole 18 to manufacture a Schottky diode. |
