| 摘要 |
PURPOSE:To prevent the deformation of a metal wiring using a sealing resin, by etching an insulating film directly beneath the metal wiring with the metal wiring pattern as a mask, providing recess parts in the insulating film, patterning the metal wiring for the recess parts of the insulating film, thereby miniaturizing the metal wire interconnection. CONSTITUTION:Resist 11 is laminated on the entire surface on a semiconductor substrate 1, a field oxide film 2 and a phosphorus silicate oxide film (PSG film) 3. A resist pattern 13 corresponding to the pattern part of a metal wiring is formed. The PSG film is etched and recess parts are provided. Then, the resist 11 is removed, and a metal layer 5 is laminated on the entire surface. Resist 14 is formed for patterning the metal wiring 5. The metal wiring 5 is patterned. The resist 14 is removed, and the surface undergoes dry etching. Thereafter, a passivation film 4 is deposited, and the work is finished.
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