| 摘要 |
PURPOSE:To prevent the generation of the creeping of a mounting material as well as to protect a conductive layer on the side face of a chip by a method wherein an insulating layer is provided on the side face of the metal layer which is connected to the earthing electrode on the upper surface of the chip and formed on the region ranging from the side face to the lower surface of the chip. CONSTITUTION:The 11ss shown in the diagram is a source electrode layer, 11d is a drain electrode layer, and 11g is a gate electrode layer. Also, a Ti layer 12, a Pt layer 13 and an Au layer 14 are coated on a source and drain gate electrode layer, and they are formed into electrodes 21d and 21s having a pad. Adjoining to the Au layer 14, an Au layer 15 is formed on the region ranging from the side face to the lower surface of a chip by performing vapor deposition or metal plating for the purpose of earthing the source electrode 21s. Besides, an insulating layer 16 is formed at least on a part of the side face part of the chip on the Au layer 15. Pertaining to the quality of mounting material, any material can be used if a creeping of solder is not generated when the chip is mounted, and SiO2, SiN and the like are enumerated as the mounting material, for example. If the material is about 1500Angstrom or above in thickness, cracks are not generated by the contact of a pincette, and also no damage is given to the Au layer 15 located on the side face of the chip.
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