| 摘要 |
A compound semiconductor device having a channel layer which is fabricated by alternately laminating an InxGa1xAs compound semiconductor layer (0.7 </= x </= 1.0) with a thickness of 16 atomic planes or less, and an InyGa1-yAs compound semiconductor layer (0 </= y </= 0.3) with a thickness of 14 atomic planes or less, so that the thickness of the former is greater than that of the latter, in which n-type impurities are doped only in the InyGa1-yAs layer (0 </= y </= 0.3) side, and the ratio In/Ga on the whole is set at 1.1 or higher. |
