| 摘要 |
<p>A technique (figure 3), for high resolution feature mask definition, in which a selectively non-erodable masking layer (1) is defined using electron resist (7) and electron lithography, and used in the selective etching of a metal coating (3). Another selective etchant is used subsequently to remove the masking material (1). The metal coating (3) is typically of chrome and may be selectively etched using a chlorine/oxygen plasma. The masking material (1) may be silicon dioxide and etched using a hydrogen containing fluorocarbon (eg. CF4/H2; CHF3). Alternatively, it may be of aluminium and etched using a chlorine, boron trichloride or carbon tetrachloride plasma. Other masking materials may be used eg. titanium, silicon, germanium or nickel. The masking layer may be formed using electron resist above the layer material (figures 1 to 3). Alternatively, the masking material and electron resist may be applied in reverse order and a float-off process used (figure 6).</p> |
