| 摘要 |
PURPOSE:To obtain a device, which can operate as a laser diode with a low threshold value and can operate as a bipolar transistor, whose high frequency characteristics are excellent, by forming a narrow stripe ridge guide structure with a plurality of layers, which are grown by a hetero-epitaxial method, and forming an effective P-N junction only in the vertical direction. CONSTITUTION:On a semi-insulating GaAs substrate 1, a ridge type lightguide comprising a lower N-AlGaAs clad layer 2, a P-GaAs active layer 3 and an upper N-AlGaAs clad layer 4 is formed by a self-alignment technology. An N<+>GaAs cap layer 5, a current constriction region 6 and an SiO2 insulating layer 7 are provided. When a bias is applied between electrodes 9 and 10, the interface part of the layers 3 and 4 acts as an effective P-N junction. Thus laser oscillation occurs. when the electrodes 10, 9 and 8 are made to be a base, an emitter and a collector, N-P-N junctions are formed in the vertical direction in a narrow stripe ridge guide part comprising the layers 4' 3 and Z. The junctions operate as a vertical N-P-H transistor' in which the layer 4 is an N region, the layer 3 is a P region and the layer 2 is an N region.
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