| 摘要 |
PURPOSE:To form the deposit films with high quality securing the evenness of electrical and optical properties and the stability of quality even in case of forming thick and hardly peeling off deposit films over broad space by a method wherein the stay time and atmosphere temperature of a gaseous material in a deposit chamber are specified. CONSTITUTION: A gaseous material represented by a general formula of AaHbXc (A: Si,Ge,Sn X: halogen atoms a,b,c: positive integer a >=2, c not equal to O) led into a deposit chamber is supplied with thermal energy to form a deposit film on a support mounted in the deposit chamber. At this time, the stay time t of gaseous material in the deposit chamber is specified to be 0.01 sec <=t<=50 sec, likewise the atmospheric temperature T to be 200 deg.C<=T<=1000 deg.C, the product of stay time t and the atmospheric temperature T to be 50 sec<=Tt<=3000 deg.C sec. Through these procedures, the deposit films with even physical properties can be formed over broad space. |
