| 摘要 |
<p>PURPOSE:To relax the rise sharpness of liquid crystal molecules for an impressed voltage to facilitate control of the light transmissivity by specifying the thickness of an oriented film layer in a liquid crystal display device having a semiconductor substrate of thin film transistors (TFT). CONSTITUTION:A gate electrode 11a, an insulating layer 12a, a semiconductor layer 13a, a source electrode 14a, and a drain electrode 15a are provided on a transparent substrate 10b to form a TFT. This TFT is provided for each surface picture element to constitute an electrode and a counter transparent electrode 18 is provided. Oriented films 16a and 16b, a liquid crystal layer 17, etc., are provided between TFTs and electrodes 18 to constitute the liquid crystal display device. The thickness of oriented films 16a and 16b is set to 0.2-1mum. Oriented films 16a and 16b are made thicker to increase a ratio Vsat/ Vth of an applied voltage Vsat corresponding to 10% transmissivity to an impressed voltage Vth corresponding to 90% transmissivity. Since oriented films are made thicker, the light transmissivity is easily controlled to improve the gradation display.</p> |
