| 摘要 |
PURPOSE:To improve the electrostatic breakdown resistance of a vertical field effect transistor by using as a gate insulating film a nitride film having equal insulation breakdown resistance to an oxide film and large specific permittivity to increase an input capacity without decreasing the insulation breakdown resistance. CONSTITUTION:A source 4 and a gate electrode 7 are provided on one main surface, and a drain electrode 10 is provided on a back surface. The gate insulating film of such a transistor has a 2-layer structure of an oxide film 5 of 300Angstrom thick and a nitride film 6 of 200Angstrom thick including equal insulation breakdown resistance to the oxide film and larger specific permittivity. Thcs, an element heretofore having uniform oxide film of 500Angstrom and an input capacity of 500pF has an input capacity of approx. l.2 tines of 600pF to improve by approx. 17% its electrostatic resistance. Thus, the input capacity can be increased without decreasing the insulation breakdown resistance, thereby resultantly increasing the electrostatic breakdown resistance. |
