发明名称 |
Control circuit for a gate turn-off thyristor |
摘要 |
To ensure higher operational reliability particularly for high-power gate-turn-off thyristors (20), a resistor (R5) is connected between gate electrode (G) and cathode (K) of the gate turn-off thyristor (20) and is monitored by means of an impedance detector (36) connected thereto. If the detector impedance drops below a predeterminable impedance limit value during the turn-off phase of the gate turn-off thyristor (20), an error signal is generated by an optocoupler (42) and a transistor (Tr1) located in its circuit and a light-emitting diode (D1) does not generate a no-error signal (76). This monitoring circuit also includes a direct-voltage source (6) from which the control voltages (7-9) for the gate turn-off thyristor (20) are taken. A switched current source (11-13, Tr2, D3) in the feed line to a turn-on thyristor (Tr2) for the firing pulse of the gate turn-off thyristor (20) can be used for improving the efficiency and the life of the control circuit. <IMAGE>
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申请公布号 |
DE3714683(A1) |
申请公布日期 |
1987.10.08 |
申请号 |
DE19873714683 |
申请日期 |
1987.05.02 |
申请人 |
BBC AKTIENGESELLSCHAFT BROWN,BOVERI & CIE. |
发明人 |
MEYER,URS;HOCHSTUHL,GERHARD |
分类号 |
H03K17/082;H03K17/732;(IPC1-7):H03K17/72;H02M1/08;H03K17/08 |
主分类号 |
H03K17/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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