| 摘要 |
PURPOSE:To obtain a semiconductor element, in which individual element can be trimmed, and which does not have parasitic opration at all, without imparing a self-overheat protecting function, by forming an insulating film between a semiconductor substrate and a heat sensitive element part, and completely isolating both parts electrically. CONSTITUTION:A plurality of vertical power MOS transistors 13, which are active elements, are connected in parallel on the most part of a semiconductor substrate 1. Thus a power region M is formed. A plurality of polycrystalline silicon diodes 15 as heat sensitive elements are connected in series on the central part of the substrate 1. A lateral MOS transistor 14 as a control part, a polycrystalline silicon resistor 16 and a constant voltage Zener diode 17 are formed at the peripheral part. Thus a control region C as a whole is formed on an insulating film (SiO2 film and the like) 10. When the bonding temperature of the power MOS 13 is abormally increased, the forward voltage of the diode 15 is decreased, the voltage across the terminals of a resistor 16c is increased' the transistor 14 is turned ON, and the power MOSs 13 are turned OFF. Thus the breakdown of the elements can be avoided. |
