| 摘要 |
PURPOSE:To miniaturize magnetic field-impressing mechanism, by installing a magnetic field-generating means (magnetic field-impressing mechanism) in The vicinity of the electrode, on whose side an etched substrate is not placed, of a pair of electrodes and besides matching this magnetic fieldapplying mechanism with a shape of the etched substrate. CONSTITUTION:A magnetic field generator (magnetic field-impressing mechanism) 20 comprising a plural number of permanent magnets arranged in orders cf NSNS is arranged closely on the upper plane of the second electrode 12 outside a container 10. A definite gas is supplied into the container 10 to hold the container 10 under a given pressure. while high frequency power is impressed between electrodes 11 and 12, the magnetic field generator 20 is rotated to enable high-density uniform plasma to be formed on an etched substrate 13 and the etched substrate 13 to be etched uniformly at a high speed. Since a plural number of circular magnets 31-34 are arranged in concentric circles as the magnetic field generator 20, the magnetic field generator 20 becomes the same circularly shaped as the etched substrate (wafer), so that the electrodes 11 and 12 and the container 10 can be miniaturized as to device constitution.
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