发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING STACKED CAPACITOR-TAPE MEMORY CELLS |
摘要 |
In a semiconductor memory device having stacked capacitor-type memory cells, the capacitor of each memory cell comprises an electrode, an insulating layer, and a counter electrode. The electrode is connected electrically to a source or drain region of a transfer transistor and extends over a part of a word line adjacent to another word line serving a gate electrode of the transfer transistor, at which part no memory cell is formed. |
申请公布号 |
DE3373381(D1) |
申请公布日期 |
1987.10.08 |
申请号 |
DE19833373381 |
申请日期 |
1983.12.07 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKEMAE, YOSHIHIRO;NAKANO, TOMIO;SATO, KIMIAKI |
分类号 |
G11C11/401;H01L21/8242;H01L27/10;H01L27/108;H01L29/78;(IPC1-7):H01L27/10 |
主分类号 |
G11C11/401 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|