发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the delay of an element and to reduce the erroneous operation caused by a crosstalk by a method wherein a part or the whole of a conductive substance is shielded with the other conductive substance through the intermediary of an insulating substance. CONSTITUTION:A wiring layer 13 is shielded by providing a conductive film 16 in the insulating film 15 located between a semiconductor substrate 11 and a wiring, and this shielding conductive film is connected to the substrate 11. As electromagnetic waves (energy) are propagated in the state wherein they are confined between the wiring 13 and the conductive film 16, no effect is generated between them. The title semiconductor device is manufactured by successively providing a semiconductor substrate, a field insulating layer, a conductive film, an insulating film and a wiring layer. In this method of constitution, a conductive substance is inserted between the wiring and the substrate, and the others are treated by the same wiring method as the commonly used one.
申请公布号 JPS62229958(A) 申请公布日期 1987.10.08
申请号 JP19860072856 申请日期 1986.03.31
申请人 TOSHIBA CORP 发明人 NOGUCHI TATSUO;ASAHI YOSHINORI
分类号 H01L23/52;H01L21/3205 主分类号 H01L23/52
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