| 摘要 |
PURPOSE:To obtain the stable operation of a semiconductor device by electrically connecting the sidewall around a gate electrode as a conductor with a gate electrode to suppress variation in the surface potential of source and drain regions disposed under the sidewall by the remaining charge in an insulating film. CONSTITUTION:In case of wiring, a gate electrode 8 and a sidewall 17 are conducted to be the same potential. A source potential S and a drain potential Dare respectively applied to source, drain regions 13, and a gate potential G is applied to the electrode 8 and the sidewall 17. Hot electrons generated near the drain are implanted to a gate insulating film 7, but mostly flow to the electrode 8. Charge trapped in the film 7 remains on the top of an N<-> type region 10, and since the sidewall 17 becomes the same potential as the electrode 8, it can suppress the variation in the surface potential of the region 10 by the remaining charge.
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