| 摘要 |
PURPOSE:To prevent perpendicular patterns from differing in their processing shapes, by locating magnetic field-impressing mechanism at the side facing the first electrode and in the vicinity of the second electrode facing the first electrode on which a sample is placed so that magnetic field intensity sufficiently large on the etched substrate can be obtained. CONSTITUTION:while a definite gas is supplied into a container 10 to hold the container 10 under a given pressure and high frequency power is impressed between electrodes 11 and 12, a magnetic field generator 30 is moved to enable high-density uniform plasma to be formed on an etched substrate 13 and the etched substrate 13 to be etched uniformly at a high speed. Since the magnetic field generator 30 is located not at the side of the first electrode 11, on which the etched substrate 13 is placed, but at the side of the second electrode, troubles, in which ions incident to the etched substrate 13 from a high-density plasma region are bent by the magnetic field or so, can be prevented from occurring, without any phenomenon in which perpendicular patterns differ in their processing shapes.
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