GOLD WIRE FOR SEMICONDUCTOR DEVICE BONDING

摘要

PURPOSE:To obtain a gold wire for semiconductor device bonding having high strength at ordinary and high temps. and reduced in loop height, by using pure gold of >=99.99% purity and by adding specific amounts of La and/or Pb and Be and/or Ca to the above. CONSTITUTION:A gold ingot has a composition in which 0.0001-0.006wt% La and/or Pb and 0.002-0.003wt% Be and/or Ca are incorporated to the pure gold of >=99.99% purity containing inevitable impurities. This gold ingot is subjected to wire drawing working to be formed into gold wire for semiconductor device bonding.