发明名称 LOW-TEMPERATURE PLASMA TREATING DEVICE
摘要 PURPOSE:To carry out low-temp. plasma treatment with reproducibility by providing a means for monitoring the electric discharge conditions during the treating time and controlling the discharge conditions of plasma or a gaseous reactant in a fixed state, and uniformizing the thickness and quality of a film and the surface treatment. CONSTITUTION:A control means consisting of optical sensors 21 and 22 provided with a filter, a divider 23, and a differential amplifier 25 is provided in a sample chamber 11a. Two kinds of emitted light spectra 20a and 20b in the vicinity of a sample 15 are received by the filter-provided optical sensors 21 and 22, the sensitivity is regulated, the values are inputted to the divider 23, and the ratio of both spectra 20a and 20b is obtained. The ratio is transmitted to the differential amplifier 25, and the difference from the set value 24 is detected. The difference is fed back to the current controllers 19a and 19 of the first and the second electric power source 18a and 18 for supplying an electric current to a magnetic field coil 4 or a microwave oscillator 17. Consequently, the discharge conditions of plasma 7 or a gaseous reactant 13 during treatment can be controlled in a fixed state.
申请公布号 JPS62228482(A) 申请公布日期 1987.10.07
申请号 JP19860051188 申请日期 1986.03.08
申请人 HITACHI LTD;HITACHI SERVICE ENG CO LTD 发明人 SUZUKI KAZUO;CHIBA ATSUSHI;SONOBE TADASHI
分类号 B01J19/08;C23C14/00;C23C14/54;C23C16/50;C23C16/511;C23C16/52;C23C16/56;C23F4/00;H01L21/31 主分类号 B01J19/08
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