发明名称 DRY ETCHING GAS AND DRY ETCHING METHOD
摘要 PURPOSE:To ensure a satisfactory etching shape and dimensional reproducibility of the width of lines by adding a gaseous hydrocarbon to a principal etching gas and carrying out etching with the resulting dry etching gas. CONSTITUTION:An etching mask 6 is placed on a material 5 to be etched on a base 4 and the material 5 is dry etched. At this time, a gaseous hydrocarbon such as ethane, ethylene, acetylene, propane or propylene is added to a principal etching gas by about 1-70vol% and the resulting dry etching gas is used. A polymer 10 of the hydrocarbon sticks to the surface of the mask 6 and acts as a protective film during etching. The etching resistance of the mask 6 is improved, a satisfactory etching shape and dimensional reproducibility are ensured and the degree of freedom during the setting of etching conditions is increased.
申请公布号 JPS62228491(A) 申请公布日期 1987.10.07
申请号 JP19860071091 申请日期 1986.03.31
申请人 CANON INC;CANON HANBAI KK 发明人 YAMAMOTO HITOSHI;HIROHASHI TETSUO
分类号 C09K13/00;C23F4/00 主分类号 C09K13/00
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