| 发明名称 |
Semiconductor memory device. |
| 摘要 |
<p>A one-transistor one-capacitor type semi-conductor memory device having a detection circuit (TC) for detecting the electric potential of a word line (WL), to determine an appropriate timing for driving a sense amplifier (SA), thereby improving the speed of memory operations.</p> |
| 申请公布号 |
EP0240156(A2) |
申请公布日期 |
1987.10.07 |
| 申请号 |
EP19870301749 |
申请日期 |
1987.02.27 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
TAKEMAE, YOSHIHIRO;TATEMATSU, TAKEO;SATO, KIMIAKI;HORII, TAKASHI;KODAMA, NOBUMI;YANAGISAWA, MAKOTO;TAKADA, YASUHIRO |
| 分类号 |
G11C11/409;G11C7/22;G11C8/18;G11C11/407 |
主分类号 |
G11C11/409 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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