发明名称 Radiation detecting device.
摘要 <p>A solid state radiation detector (10) has semiconductor layers (14) and metal layers (16, 18) which are stacked along the incident direction of radiation rays. Each metal layer (16, 18) is made of a specific metal material which receives radiation rays entering itself and produces free photoelectrons by interactions therewith. The photoelectrons are introduced into the semiconductor layer (14), and excite it, thereby producing electron-hole pairs therein. The metal layers (16, 18) serve not only as radiation detecting layers but also as electrodes for collecting the electron-hole pairs. Therefore, when the produced electron-hole pairs are derived from the metal layers (16, 18), an electrical radiation detecting signal may be produced.</p>
申请公布号 EP0239808(A1) 申请公布日期 1987.10.07
申请号 EP19870102962 申请日期 1987.03.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HATAYAMA, TAMOTSU;NARUSE, YUJIRO
分类号 G01T1/24;G01T1/29;H01L31/118;(IPC1-7):G01T1/29 主分类号 G01T1/24
代理机构 代理人
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