DEPOSITED FILM FORMING DEVICE

摘要

PURPOSE:To improve the utilizing efficiency of gaseous raw materials and to form a deposited film having uniform characteristics at a high speed by annularly disposing gas releasing means on a substrate disposed in a deposited film forming chamber and moving the releasing means. CONSTITUTION:The cylindrical susceptor 103 is disposed by a supporter 108 in the deposited film forming chamber 101. The gaseous raw material mixture releasing means 102a-102d are disposed between the wall surface of the chamber 101 and the substrate 103 and above the substrate 103. The substrate 103 is heated and the gaseous halogen oxidizing agent such as gaseous F2/O2/He mixture is released from gas releasing holes 102d. The gaseous raw material such as gaseous SiH4/GeH4/B2H6 mixture is released from gas releasing holes 102b at the same instant. The gas releasing pipes 102a and 102c are moved at a constant speed in the direction of the position 123 where the deposition ends at approximately the same instant as the above-mentioned release to form the deposited film. The control of the film quality is made easy by the above- mentioned mechanism.