Method for forming deposited film.

摘要

A method for forming deposited film, which comprises effecting a step [A] and another step [B] at least one time, the step [A] being the introduction of a starting material (A) which is either one of a gaseous starting material (I) for formation of a deposited film and a gaseous halogenic oxidizing agent (II) having the property of oxidative action on said starting material into a film forming space in which a substrate of which at least the surface to be filmed thereon has crystal orientability is previously arranged to have said starting material absorbed onto the surface of said substrate to form an adsorbed layer (I) and the step [B] being the introduction of the other starting material (B) into said film forming space, thereby causing the surface reaction on said absorption layer (I) to occur and form a deposited film.