发明名称 |
METHOD AND DEVICE FOR TREATING SURFACE |
摘要 |
PURPOSE:To effectively perform surface treatment such as film formation in favorable velocity by leading radiating light or an activated species caused by plasma of LTE discharge on the surface of a base material incorporated in a reaction vessel and performing prescribed treatment. CONSTITUTION:Discharge is caused in a discharge space 60 of the inside of a discharge tube 6 by impressing high-frequency voltage on a coil 2 in a discharge chamber 10. LTE plasma 3 is caused by introducing gas for discharge into the discharge tube 6 and making the impressed electric power large. Activated species 18 or radiating light 17 caused by this plasma 3 is introduced into a reaction chamber 20 through a meshy electrode 30. Reaction gas is introduced into an introduction ring 13 incorporated in the reaction chamber 20 and blown on the surface of a base material 16 through small holes 130 and fed in a reaction vessel 7, and surface treatment such as film formation or etching is performed on the base material 16.
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申请公布号 |
JPS62227089(A) |
申请公布日期 |
1987.10.06 |
申请号 |
JP19860069646 |
申请日期 |
1986.03.27 |
申请人 |
ANELVA CORP |
发明人 |
SEKIGUCHI ATSUSHI;MITO HIDEO |
分类号 |
H01L21/302;C23C16/34;C23C16/48;C23C16/50;C23F4/00;H01L21/3065;H01L21/31 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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