发明名称 METHOD AND DEVICE FOR TREATING SURFACE
摘要 PURPOSE:To effectively perform surface treatment such as film formation in favorable velocity by leading radiating light or an activated species caused by plasma of LTE discharge on the surface of a base material incorporated in a reaction vessel and performing prescribed treatment. CONSTITUTION:Discharge is caused in a discharge space 60 of the inside of a discharge tube 6 by impressing high-frequency voltage on a coil 2 in a discharge chamber 10. LTE plasma 3 is caused by introducing gas for discharge into the discharge tube 6 and making the impressed electric power large. Activated species 18 or radiating light 17 caused by this plasma 3 is introduced into a reaction chamber 20 through a meshy electrode 30. Reaction gas is introduced into an introduction ring 13 incorporated in the reaction chamber 20 and blown on the surface of a base material 16 through small holes 130 and fed in a reaction vessel 7, and surface treatment such as film formation or etching is performed on the base material 16.
申请公布号 JPS62227089(A) 申请公布日期 1987.10.06
申请号 JP19860069646 申请日期 1986.03.27
申请人 ANELVA CORP 发明人 SEKIGUCHI ATSUSHI;MITO HIDEO
分类号 H01L21/302;C23C16/34;C23C16/48;C23C16/50;C23F4/00;H01L21/3065;H01L21/31 主分类号 H01L21/302
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