发明名称 |
Integrated light emitting/receiving amplifier element |
摘要 |
An integrated light amplifier in which a stripe laser is formed over a substrate and then a vertical phototransistor is formed over the laser. Electrodes are attached to the back of the substrate and to the top of the phototransistor with the phototransistor electrode being formed with a hole so that incident light can reach the phototransistor. Before formation of the substrate electrode, the substrate can be ground to the desired thickness. Photocarriers are detected and multiplied in the phototransistor and injected into the stripe laser. Additional electrodes may be provided over the laser in order to bias the laser independently of the incident light.
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申请公布号 |
US4698821(A) |
申请公布日期 |
1987.10.06 |
申请号 |
US19850733683 |
申请日期 |
1985.05.14 |
申请人 |
NEC CORPORATION |
发明人 |
TERAKADO, TOMOJI;ODAGIRI, YUICHI |
分类号 |
H01L27/15;H01L27/14;H01L31/153;H01S5/00;H01S5/026;H03K17/94;(IPC1-7):H01S3/19 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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