发明名称 |
Production of aluminum material having an aluminum nitride layer |
摘要 |
Process for producing an aluminum material having an aluminum nitride surface layer which comprises implanting the surface of an aluminum substrate with nitrogen ions while maintaining a nitrogen atmosphere under reduced pressure in the vicinity of the surface of the aluminum substrate. The aluminum nitride modified layer contains substantially no impurities such as oxygen. It is a feature of this invention to perform ion implantation in a properly controlled nitrogen atmosphere at a proper degree of vacuum in the range of about 10-7 to 10-5 Torr.
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申请公布号 |
US4698233(A) |
申请公布日期 |
1987.10.06 |
申请号 |
US19860872278 |
申请日期 |
1986.06.10 |
申请人 |
NIPPON LIGHT METAL COMPANY LIMITED;RIKAGAKU KENKYUSHO |
发明人 |
OHIRA, SHIGEO;IWAKI, MASAYA |
分类号 |
C23C14/06;C23C14/22;C23C14/48;(IPC1-7):B05D3/06 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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