发明名称 Production of aluminum material having an aluminum nitride layer
摘要 Process for producing an aluminum material having an aluminum nitride surface layer which comprises implanting the surface of an aluminum substrate with nitrogen ions while maintaining a nitrogen atmosphere under reduced pressure in the vicinity of the surface of the aluminum substrate. The aluminum nitride modified layer contains substantially no impurities such as oxygen. It is a feature of this invention to perform ion implantation in a properly controlled nitrogen atmosphere at a proper degree of vacuum in the range of about 10-7 to 10-5 Torr.
申请公布号 US4698233(A) 申请公布日期 1987.10.06
申请号 US19860872278 申请日期 1986.06.10
申请人 NIPPON LIGHT METAL COMPANY LIMITED;RIKAGAKU KENKYUSHO 发明人 OHIRA, SHIGEO;IWAKI, MASAYA
分类号 C23C14/06;C23C14/22;C23C14/48;(IPC1-7):B05D3/06 主分类号 C23C14/06
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