Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.
申请公布号
US4698234(A)
申请公布日期
1987.10.06
申请号
US19860897449
申请日期
1986.10.17
申请人
ENERGY CONVERSION DEVICES, INC.
发明人
OVSHINSKY, STANFORD R.;GUHA, SUBHENDU;NATH, PREM;YANG, CHI C.;FOURNIER, JEFFREY;KULMAN, JAMES