| 摘要 |
PURPOSE:To reduce the reliability due to secular change by connecting a base and a collector of a transistor (TR) via the 1st diode and using a TR circuit whose emitter is connected with the 2nd diode. CONSTITUTION:The base aud collector of the 1st TR 1 are connected via the 1st diode 3, the emitter of the TR l is connected to one terminal of the 2nd diode 4, the collector of the 2nd TR 2 and the collector of the TR 1 are connected, the base of the TR 2 is connected to the other terminal of the 2nd diode 4 and the base aud emitter of the diode 4 are connected via a resistor. A node current IE1 of the diode 3 connected between the base and collector of the TR l is subjected to a multiple of 1/hFEQ1 of a node current IE2 of the TR 1 and two kinds of changes in a voltage VBE due to temperature change are offered. Further, a TR circuit comprising the TR 1 and the diodes 3,4 is connected between the base and collector of the TR 2 to obtain a change in the voltage VBE due to the 3rd temperature change.
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