| 摘要 |
PURPOSE:To form a film having strong adhesive power on a cleaned insulating substrate by vapor-depositing a metallic film on the substrate with a neutral cluster, implanting an ionized inert gas, and accelerating an ionized cluster to form a film. CONSTITUTION:The surface of a substrate 9 in a vacuum vessel 1 is cleaned by applying ions of a gas. A metallic material 1 in a crucible 2 is heated to form a neutral cluster and a metallic film is vapor-deposited by spouting the cluster toward the substrate 9 to ensure electric conductivity. An inert gas is fed from a gas introducing pipe 6 and ionized by a shower of ions from an electron emitting source 4. High voltage is then applied to an acceleration electrode 8 to implant the ionized inert gas, so the vapor-deposited metallic film is implanted into the substrate 9 to ensure adhesive power. Finally, a film is formed to the desired thickness by a cluster ion beam vapor-deposition method.
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