发明名称 PLASMA ADHERING APPARATUS AT LOW TEMPERATURE
摘要 PURPOSE:To eliminate the adhesion of impurities to a microwave introducing window, by arranging a magnetic field generating means which applies a magnetic field to a plasma forming chamber in the axial direction thereof and first and second gas introducing means for introducing gas into the membrane forming chambers provided to both sides of the plasma forming chamber. CONSTITUTION:Electron cyclotron resonance is generated in a plasma forming chamber 30 by a microwave and first gas such as silane gas is ionized on the basis of said resonance in the plasma forming chamber 30 to form plasma. This plasma, that is, a charged particle is gradually converted to motion having a speed component along magnetic flux from the circular motion in the plasma forming chamber 30 by the magnetic flux directing to a membrane forming chamber 40. The charged particle penetrated in the membrane forming chamber 40 releases second gas such as ammonia gas and molecules constituting these two gases are bonded on a substrate 50 while the bonded molecule is accumulated on the substrate 50 as an Si-N membrane.
申请公布号 JPS62227442(A) 申请公布日期 1987.10.06
申请号 JP19860074442 申请日期 1986.03.31
申请人 SHIMADZU CORP 发明人 FUJITA HIROYUKI
分类号 B01J19/08;B01J12/00;C23C16/34;C23C16/50;C23C16/511 主分类号 B01J19/08
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