| 摘要 |
PURPOSE:To prevent elements from generation of mutual mismatching at a semiconductor device containing the semiconductor element according to a piezoelectric effect by a method wherein grooves are provided in the neighborhood of the element formed on a substrate. CONSTITUTION:An N type buried layer 2 is formed in a P type semiconductor substrate 1, an N<+> type emitter region 5, a P<+> type base region 6 and an N<+> type collector contact region 7 are formed in an N type epitaxial layer 3 separated from other regions by P<+> type insulatingly isolating layers 24, and electrodes 9, 10, 11 are provided at the openings of an insulating film 8 to form an N-P-N transistor. V-shape grooves 30, 31 to reach the bottom of the epitaxial layer 3 are formed on both the sides thereof. When stress 12 is applied, the active regions of the transistor are hard to receive force according to stress because of existence of the grooves, a change of characteristic according to a piezoelectric effect is not generated, the initial characteristic is held after assembly, and mismatching is not generated. |
